Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has completed development of the world's first 512-megabit DDR2 Mobile RAM operating at an ultra-low voltage of 1.2V. The new product achieves 533Mbps high-speed with the same power consumption of DDR Mobile RAM.
DDR2 Mobile RAM is JEDEC LPDDR2-compliant and an advanced Elpida Mobile RAM product that combines the high performance with low-power consumption suitable for mobile phone and other mobile devices.
From the beginning Elpida has relied on its pioneering product planning and development capabilities to focus on DRAMs for mobile phones and digital consumer electronics. As a result, our Mobile RAM was soon well established in Japan and is now popular with the world's leading mobile phone makers in Europe and Asia, thus giving us the top share in the mobile DRAM market.
Elpida's Mobile RAM is now used in many high-performance 2.5G and 3G mobile phones, which in recent years have gone beyond music downloading and website surfing to offer such high-performance features as video viewing, video recording and video output. Given expectations of growth in high-definition (HD) video functions, products that can rapidly process high-resolution graphics and other high-density data will become increasingly important.
Elpida has developed DDR2 Mobile RAM ahead of its competitors to respond this growing need for high performance low-power memory. As a No.1 supplier of Mobile RAM, Elpida will continue to develop the most advanced products to meet customer's demands.
The main features of DDR2 Mobile RAM are as follows:
* Advanced development of DDR2 Mobile RAM compliant with the JEDEC LPDDR2 specification now undergoing final standardization.
* Including the DRAM core operates at 1.2V versus 1.8V for DDR Mobile RAM
1.2V high-speed operation achieved using 70nm process technology (now in use in mass production) and new peripheral circuit technology.
Ultra-low voltage alley block and ECC circuits that use global top-level technology enabled dependable functionality with 1.2V I/O and low self-refresh current.
* 533Mbps high-speed functions based on the DDR2 interface
* Partial alley self refresh (PASR), automatic temperature compensation self refresh (ATCSR), deep power down (DPD) and other standardized Mobile RAM special low-power functions enable a longer battery operating time.
